Variation-aware advanced CMOS devices and SRAM / 
Changhwan Shin 
 - vii, 140 p :  col. ill. ;  24 cm. 
 - Springer series in advanced microelectronics,  56 .
<br/><br/>Includes bibliographical references 
<br/><br/><label>ISBN: </label>9789401775953 
<br/><br/><label>LCCN: </label>2016940803 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Metal oxide semiconductors, Complementary.<br/>Random access memory.
<br/><br/><label>Dewey Class. No.: </label>621.384134