TY  - BOOK
TI  - Variation-aware advanced CMOS devices and SRAM
SN  - 9789401775953
U1  - 621.384134 23
PY  - 2016///
CY  - New York, NY
PB  - Springer Berlin Heidelberg
KW  - Metal oxide semiconductors, Complementary
KW  - Random access memory
N1  - Includes bibliographical references
UR  - https://www.loc.gov/catdir/enhancements/fy1615/2016940803-b.html
UR  - https://www.loc.gov/catdir/enhancements/fy1615/2016940803-d.html
UR  - https://www.loc.gov/catdir/enhancements/fy1615/2016940803-t.html
ER  -