| 000 | 01372cam a22003615i 4500 | ||
|---|---|---|---|
| 999 |
_c1962 _d1962 |
||
| 001 | 19082505 | ||
| 003 | OSt | ||
| 005 | 20170913092854.0 | ||
| 008 | 160505s2016 nyu 000 0 eng | ||
| 010 | _a 2016940803 | ||
| 020 | _a9789401775953 | ||
| 040 |
_aDLC _beng _cDLC _erda _dDLC |
||
| 042 | _apcc | ||
| 082 |
_223 _a621.384134 |
||
| 245 | 0 | 0 |
_aVariation-aware advanced CMOS devices and SRAM / _cChanghwan Shin |
| 263 | _a1606 | ||
| 264 | 1 |
_aNew York, NY : _bSpringer Berlin Heidelberg, _c2016. |
|
| 300 |
_avii, 140 p : _bcol. ill. ; _c24 cm. |
||
| 336 |
_atext _btxt _2rdacontent |
||
| 337 |
_aunmediated _bn _2rdamedia |
||
| 338 |
_avolume _bnc _2rdacarrier |
||
| 440 |
_aSpringer series in advanced microelectronics, _n56 _94913 |
||
| 504 | _aIncludes bibliographical references | ||
| 650 |
_aMetal oxide semiconductors, Complementary. _94914 |
||
| 650 |
_aRandom access memory. _94915 |
||
| 856 | 4 | 2 |
_3Contributor biographical information _uhttps://www.loc.gov/catdir/enhancements/fy1615/2016940803-b.html |
| 856 | 4 | 2 |
_3Publisher description _uhttps://www.loc.gov/catdir/enhancements/fy1615/2016940803-d.html |
| 856 | 4 | 1 |
_3Table of contents only _uhttps://www.loc.gov/catdir/enhancements/fy1615/2016940803-t.html |
| 906 |
_a0 _bibc _corignew _d2 _eepcn _f20 _gy-gencatlg |
||
| 942 |
_2ddc _cBK |
||